ООО НПФ "Авторские Технологии" Транзисторы Все цены указаны в USD, расчеты по курсу ЦБ РФ плюс 1% на дату выписки счета. Manufacture Part Number Pkg ROHM / Аналоги Description Склад $100 $300 $1000 IGBT Transistors (Транзисторы, IGBT) Toshiba 2SC5129 . . TO3PH(S), HORIZ. DIFL. OUTP HIGH SPEED SWITCHING 1500V 10A 0 3,1 2,819 2,79 Infineon BUP314 . . TO218AB, IGBT 32 A 1200 V 0 4,74 4,31 3,918 Infineon BUP314D . . TO218AB, IGBT, 1200V 42A 300W 560ns, Tj = -55°C to +150°C / with anti-parallel Diodes 0 8,11 7,373 7,13 Toshiba GT15Q101 . . TO3P(N) IGBT 15A 1200V 0 5,8 5,273 5,22 Fairchild Semiconductor HGT1S14N36G3VLS . . TO263AB, N-ch IGBT, 360V 14A 100W, Turn-Off 7us, Tj = -40°C to +175°C / Logic Level Gate Drive, Internal Voltage Clamp 0 2,72 2,473 2,25 Intersil HGTG20N120CND . . TO247, (NPT) N-chan IGBT 1200V 63A,-55/+150C, with Anti-Parallel Hyperfast Diode 0 12,16 11,055 10,95 Fairchild Semiconductor HGTG27N120BN . . TO247, (NPT) N-chan IGBT 1200V 72A,-55/+150C 0 16,88 15,35 13,955 Intersil HGTG30N60B3D . . TO247, UFS Series N-ch IGBT, 60A 600V, toff < 275ns,Top = -55°C to +150°C / with Anti-Parallel Hyperfast Diode 0 11,27 10,246 10,14 Intersil HGTG30N60C3D . . TO247, UFS Series N-ch IGBT, 63A 600V, toff < 320ns,Top = -40°C to +150°C / with Anti-Parallel Hyperfast Diode 0 7,75 7,75 7,75 Intersil HGTP3N60B3 . . TO220AB, UFS series N-chan IGBT 7A 600V, 220ns,Top = -55°C to +150°C 0 1,43 1,3 1,29 Intersil HGTP7N60B3D . . TO220AB, UFS Series N-ch IGBT 14A 600V, with Anti-Parallel Hyperfast Diode, 130ns,Top = -55°C to +150°C 0 2,62 2,382 2,36 International Rectifier IRG4BC30U . . TO220AB, N-ch IGBT, 600V 12A 100W, Turn-Off 180ns, Tj = -55°C to +150°C 0 2,8 2,546 2,5 International Rectifier IRG4BC30UD . . TO220AB, N-ch IGBT, 600V 12A 100W 140ns, Tj = -55°C to +150°C / with anti-parallel Diodes 0 3,75 3,41 3,37 International Rectifier IRG4PC40UD . . . 0 $5,925 $5,386 $5,129 International Rectifier IRG4PC50UD . . TO247AC, IGBT(n-chan) with anti-parallel Diodes, Vce = 600V, Ic = 27A, Turn-Off Delay Time 230ns, P = 78 to 200W, Tj = -55°C to +150°C 0 7,319 6,653 6,048 International Rectifier IRG4PH40KD . . TO247AC, N-chan IGBT+Diod, 1200V 15A 106ns,-55/+150C 0 6,44 6,44 5,855 International Rectifier IRG4PH40UD . . TO247AC, IGBT(n-chan) with anti-parallel Diodes, Vce = 1200V, Ic = 21A, Turn-Off Delay Time 240ns, P = 65 to 160W, Tj = -55°C to +150°C 0 5,6 5,091 4,629 International Rectifier IRG4PH50KD . . TO247AC, N-ch IGBT, 1200V 24A 200W 310ns, Vce(on) = 2.77V, Tj = -55°C to +150°C 0 7,852 7,138 6,489 International Rectifier IRG4PSC71UD . . TO247, N-ch IGBT, 600V 60A (140W @ Tc = +100°C ) 353ns, Tj = -55°C to +150°C / with anti-parallel Diodes 0 21,6 19,637 17,852 International Rectifier IRG4PSH71U . . TO247, N-ch IGBT, 1200V 42A 350W, Turn-Off 460 ns, Tj = -55°C to +150°C 0 14,33 13,028 12,9 International Rectifier IRG4PSH71UD . . TO247, IGBT(n-chan) with anti-parallel Diodes, Vce = 1200V, Ic = 42A, Turn-Off Delay Time 350ns, P = 140 to 350W, Tj = -55°C to +150°C 0 15,7 14,75 13,8 Motorola MGP20N60 . . TO220, IGBT 20A 600V 0 4,3 3,91 3,87 Fairchild Semiconductor SGP23N60UFDTU . . TO220, N-chan IGBT 600V 23A 0 1,78 1,619 1,6 Fairchild Semiconductor SGP23N60UFTU . . TO220, N-chan IGBT 600V 23A 0 1,78 1,78 1,78 Fairchild Semiconductor SGP6N60UFDTU . . TO220, N-chan IGBT 600V 6A 0 0,91 0,828 0,82 Transistors, Bipolar (Транзисторы, Bipolar) Fairchild Semiconductor 2N5401 . . TO92, PNP Transistor, 150V 600mA 625mW, F = 100 to 300MHz, DC Current Gain 60 to 240,Top = -55°C to +150°C, 0 0,04 0,04 0,04 Motorola 2N5657 . . TO225, NPN PWR 0.5A 350V, P = 20W, 10 MHz, DC Current Gain 30-250,Top = -65°C to +150°C 0 0,3 0,3 0,3 ON Semiconductor BC807-16LT1 SOT23 (BC807-16?) PNP Small Signal 45V 0.1A, 100 MHz, DC Current Gain 100-250,Top = -55°C to +150°C /marking (5A) / 0 0,06 0,055 0,05 ON Semiconductor BC817-25LT1 SOT23 (BC817-25) NPN Small Signal 45V 0.1A, 100 MHz, DC Current Gain 160-400,Top = -55°C to +150°C /marking (6B) / 0 0,06 0,055 0,05 ON Semiconductor BC846ALT1 SOT23 . NPN Small Signal, 0.1A, 65V, 100 MHz, DC Current Gain (110-220)&Ic = 2mA,Top = -55°C to +150°C /marking (1A) / 5400 $0,028 $0,025 $0,023 General Semiconductor BC847B SOT23 . NPN Transistor, 0.1A, 45V, 225mW, 100MHz, DC Current Gain 150,Tj = -55°C to +150°C 0 $0,028 $0,025 $0,023 Motorola BC847CLT1 SOT23 (BC847C) NPN Small Signal 45V 0.1A, 100 MHz, DC Current Gain (420-800)@Ic = 2mA,Top = -55°C to +150°C /marking (1G) / 0 0,07 0,064 0,06 Motorola BC848CLT1 SOT23 (BC848C) SOT-23, NPN Small Signal 30V 0.1A, 100 MHz, DC Current Gain (420-800)&Ic = 2mA,Top = -55°C to +150°C /marking (1L) / 215 0,06 0,055 0,05 ON Semiconductor BC856ALT1 SOT23 . PNP Small Signal, 0.1A, 65V, 100MHz, DC Current Gain (125-250)&Ic = 2mA,Top = -55°C to +150°C /marking (3A) / 6000 $0,028 $0,025 $0,023 Motorola BC857BLT1 SOT23 (B857B) PNP Small Signal, 0.1A, 45V, 100MHz, DC Current Gain (220-475)&Ic = 2mA,Top = -55°C to +150°C /marking (3F) / 0 $0,015 $0,013 $0,012 Motorola BC857CLT1 . . SOT-23, PNP Small Signal 45V 0.1A, 100 MHz, DC Current Gain (420-800)&Ic = 2mA,Top = -55°C to +150°C /marking (3G) / 0 0,06 0,055 0,05 Philips BCP53/T1 . . SOT-223, PNP Transistor, 1A 80V 1.3 W 115MHz,Top = -65°C to +150°C, (NPN complements: BCP54, BCP55 and BCP56). 0 0,54 0,54 0,54 Philips BCP56/T1 . . SOT-223, NPN Transistor, 1A 80V 1.3 W 115MHz,Top = -65°C to +150°C, (NPN complements: BCP51, BCP52 and BCP53). 0 0,54 0,54 0,54 Philips BFS17LT . . SOT-23, NPN Transistor 25V, 25mA, 1 GHz, 300mW,DC Current Gain 90,Tj = -55°C to +150°C / Marking (E1p.) 0 0,37 0,337 0,33 Motorola BUX48 . . TO204, NPN PWR 15A 400V, P = 100 to 175W, Recovery Time 3.1us, Tj = -65°C to +200°C 0 6 5,455 5,4 ON Semiconductor D44VH10 . . TO220, NPN PWR 15A 80V, P = 83W, Recovery Time 790ns, Top = -55°C to +150°C (Complementary PNP D45VH10) 0 0,86 0,782 0,77 Fairchild Semiconductor KSA1943-OTU . . TO264, PNP Audio & Car Booster Outp Trans 0 2,16 1,964 1,94 Fairchild Semiconductor KSC5200-OTU . . TO264, NPN Audio & Car Booster Outp Trans 0 2,34 2,128 2,11 Motorola MJD31C . . DPAK, NPN PWR 3A 100V, P = 15W, 3 MHz, DC Current Gain 25, Tj = -65°C to +150°C (Complementary PNP MJD32C) 0 0,43 0,391 0,39 ON Semiconductor MJD41CT4 . . DPAK, NPN PWR 6A 100V, P = 20W, 3 MHz, DC Current Gain 15 to 75, Tj = -65°C to +150°C,Tape and Reel (Complementary PNP MJD42C) 0 0,55 0,55 0,55 ON Semiconductor MJD42C . . DPAK, PNP PWR 6A 100V, P = 20W, 3 MHz, DC Current Gain 15 to 75, Tj = -65°C to +150°C (Complementary NPN MJD41C) 0 0,44 0,4 0,364 ON Semiconductor MJD44H11 . . DPAK, NPN PWR 8A 80V, P = 20W, 50 MHz, DC Current Gain >60, Tj = -55°C to +150°C (Complementary PNP MJD45H11 ) 0 0,53 0,482 0,439 ON Semiconductor MJD45H11 . . DPAK, PNP PWR 8A 80V, P = 20W, 40 MHz, DC Current Gain >60, Tj = -55°C to +150°C (Complementary NPN MJD44H11 ) 0 0,53 0,482 0,439 Motorola MJD6039T4 . . DPAK, NPN Darlington PWR 4A 80V, P = 20W, DC Current Gain 500 to 1000, Tj = -65°C to +150°C 0 0,66 0,6 0,546 Motorola MMBTA14LT1 SOT23 SSTA14 NPN Darlington Transistor 30V, 300mA,125MHz, 225mW,DC Current Gain 10 000 to 20 000,Tj = -55°C to +150°C / Marking (1N) 0 0,22 0,2 0,2 ON Semiconductor MMBTH10LT1 . . SOT-23, NPN Transistor 25V, 650MHz, 225mW,DC Current Gain 60,Tj = -55°C to +150°C / Marking (3EM) 0 0,15 0,14 0,14 Fairchild Semiconductor MMBTH81LT1 . . SOT-23, PNP Transistor 20V, 50mA, 600MHz, 225mW,DC Current Gain 60,Tj = -55°C to +150°C / Marking (3D) 0 0,14 0,14 0,14 ON Semiconductor MPSA29 . . TO92, NPN 100V 500mA 0 0,08 0,073 0,067 Motorola TIP31C TO220AB (КТ817Г) NPN PWR, 3A 100V 40W, 3MHz, DC Current Gain >20@Ic = 0.5A, Tj = -65°C to +150°C (Complementary PNP TIP32C ) 0 0,35 0,32 0,291 Motorola TIP32C TO220AB (КТ816Г) PNP PWR, 3A 100V 40W, 3MHz, DC Current Gain >20@Ic = 0.5A, Tj = -65°C to +150°C (Complementary NPN TIP31C ) 0 0,35 0,32 0,32 Transistors, MOSFET (Транзисторы, MOSFET) Fairchild Semiconductor 2N7002LT1 SOT23 (RK7002) N-Channel MOSFET, 60V, Rds(on)=7.5Ohm 6064 $0,052 $0,047 $0,044 Toshiba 2SK3131 . . TO247, TMOS Power N-channel 500 V 50 A, Rds(on)=0.085 Ohm 0 15,33 13,94 12,673 Motorola BS107A TO92 . N-channel MOSFET, 200V, 0.25A, 0.35W, 12ns, Rds(on)=4.5 Ohm, Tj = -55°C to +150°C 489 $0,195 $0,177 $0,168 ON Semiconductor BS107ARL1 TO92 . N-channel MOSFET, 200V, 0.25A, 0.35W, 12ns, Rds(on)=4.5 Ohm, Tj = -55°C to +150°C 0 $0,192 $0,174 $0,165 Fairchild Semiconductor BS170 . . TO92, N-channel FET, 500 mA, 60 V, -55/+150C 0 0,14 0,13 0,12 Infineon BS170-E6288 . . TO92, N-chan FET 500mA 60V, -55/+150C 0 0,14 0,13 0,12 Fairchild Semiconductor BS170/D75Z . . TO92, N-chan FET 500mA 60V, -55/+150C 0 0,14 0,13 0,12 Infineon BSP89E6327 . . SOT-223, N-ch MOSFET, 240V 0.36A (1.7 W @ Ta = +25°C) 30ns, Rds(on) = 6 Ohm, Tj = -55°C to +150°C / Logic Level, Tape and Reel 0 0,3 0,273 0,248 Infineon BSS123 . . SOT-23, N-ch MOSFET, 100V 0.17A 0.36W 10ns, Rds(on) = 6 Ohm, Tj = -55°C to +150°C / Logic Level 0 0,11 0,11 0,11 ON Semiconductor BSS84LT1 . . SOT-23, P-ch PWR MOSFET, 50V 130mA 16ns, Rds(on) =10 Ohm, Top = -55°C to +150°C / Marking (PD) 0 0,09 0,09 0,09 Infineon BTS550P . . TO218AB/5, N-chan MOSFET Highside Power Switch, Ron = 0.0036Ohm,Vs = 5 to 34V, Iout = 115A, Delay Time 600us, Iin = 1.5mA, P = 360W, Tj = -40°C to +150°C 0 10,1 9,182 9,09 International Rectifier FB180SA10 . . SOT-227, PWR MOSFET, 180A, 100V, 0.0065Om, 300ns,Top= -55° to +150°C 0 $34,390 $31,263 $29,774 Intersil HUF75333P3 . . TO220AB, PWR MOSFET N-chan, 55V 66A 0.016Ohm 0 1,58 1,437 1,42 Intersil HUF75337P3 . . TO220AB, PWR MOSFET N-chan, 55V 75A 0.014Ohm 0 1,65 1,5 1,49 International Rectifier IPS041L . . SOT223, Fully Protected Power MOSFET Switch 50V 2A 0.5Ohm 0 0,76 0,76 0,76 International Rectifier IRF3205 . . TO220, N-chan TMOS PWR FET 55V 98A 0,008Ohm 10 1,028 0,935 0,89 International Rectifier IRF3205L . . TO262, N-chan TMOS PWR FET 55V 98A 0,008Ohm 0 2,5 2,273 2,25 International Rectifier IRF3205S . . D2PACK, N-chan TMOS PWR FET 55V 98A 0,008Ohm 0 1,58 1,49 1,49 International Rectifier IRF3710 . . TO220, Power MOSFET, N-chan, Vds = 100V, Id = 57A, Rds(on) = 0.023Ohm, Recovery Time 220ns, P = 200W, Tj = -55°C to +175°C 0 1,3 1,182 1,075 International Rectifier IRF530N . . TO220AB, Power MOSFET 100V 17A 0.09 Ohm, 93ns,-55/+175C 0 0,54 0,54 0,491 International Rectifier IRF540N TO220AB . Power MOSFET 100V 33A 0.0052 Ohm, 93ns,-55/+175C 10 $0,762 $0,725 $0,690 Fairchild Semiconductor IRF550A TO220 . N-ch PWR MOSFET, 100V 40A 167W 135ns, Rds(on) = 0.04Ohm,Tj = -55°C to +175°C 0 $1,196 $1,087 $1,035 International Rectifier IRF630 TO220AB . Power MOSFET 200V 9A 0.4 Ohm, 10 $0,699 $0,665 $0,633 STM IRF640 . . TO220, N-ch PWR MOSFET, 200V 18A 125W 240ns, Rds(on) = 0.18Ohm, Tj = -40°C to +150°C 0 $0,629 $0,599 $0,570 Fairchild Semiconductor IRF640A . . (discontinued, replacement IRF640B) T0220, N-chan PWR MOSFET 200V 18A 0,18Ohm 0 0,75 0,75 0,75 International Rectifier IRF7304 . . SO8, Dual P-chan 20V 4A 0.09 Ohm, Logic Level 0 0,79 0,72 0,655 International Rectifier IRF7307 . . SO8, Logic Level Dual N- and P-chan MOSFET 20V 4.3A 0.05Ohm 0 0,85 0,773 0,703 International Rectifier IRF740 . . TO220, N-chan PWR FET 400V 10A 0,55Ohm 0 0,877 0,797 0,725 Fairchild Semiconductor IRF740A . . (discontinued, replacement IRF740B) TO220, N-chan PWR FET 400V 10A 0,55Ohm 0 1 0,91 0,9 International Rectifier IRF7416 . . SO-8, P-ch PWR MOSFET, -30V -10A 2.5W 56ns, Rds(on) = 0.02Ohm,Tj = -55°C to +150°C 0 0,915 0,832 0,756 International Rectifier IRF9540N TO220AB . P-chan PWR MOSFET 100V 23A 0.117Ohm,150ns,-55/+175C 0 $0,679 $0,617 $0,587 International Rectifier IRF9640S . . D2PAK, P-chan TMOS PWR FET 200V 11A 0,5Ohm 0 3,1 2,819 2,79 International Rectifier IRF9Z34N . . TO220AB, P-chan PWR MOSFET 55V 19A 0.1Ohm,54ns,-55/+175C 0 0,58 0,528 0,48 International Rectifier IRF9Z34S . . TO263AB, P-chan MOSFET 18A 60V 0 2,5 2,5 2,5 International Rectifier IRFBE20 . . TO220AB, N-chan PWR MOSFET 800V 1.8A 6.5Ohm, 380ns,-55/+150C 0 0,76 0,76 0,691 International Rectifier IRFBG20 . . TO220, N-chan TMOS PWR FET 1000V 1A 11.0Ohm 0 1,81 1,646 1,63 International Rectifier IRFD120 . . DIP4, N-chan PWR MOSFET 100V 1.3A 0.27 Ohm, 130ns,-55/+175C 0 0,48 0,45 0,45 International Rectifier IRFL210 . . . 0 $0,439 $0,418 $0,398 International Rectifier IRFL9110 . . SOT223, P-chan TMOS PWR FET 100V 1.1A 1,2Ohm 0 0,85 0,773 0,77 STM IRFP250 . . TO247AC, Automotive PWR MOSFET 75V 209A 4.5mOm 0 $2,126 $1,932 $1,840 Fairchild Semiconductor IRFP250B . . TO247AC, Automotive PWR MOSFET 75V 209A 4.5mOm 0 $1,609 $1,462 $1,392 International Rectifier IRFP2907 . . TO247AC, Automotive PWR MOSFET 75V 209A 4.5mOm 0 8 8 8 International Rectifier IRFP360 . . TO247AC, N-ch PWR MOSFET, 400V 23A 280W, Rds(on) = 0.2Ohm, Tj = -55°C to +150°C 0 2,9 2,637 2,61 International Rectifier IRFP460 . . TO247, N-chan TMOS PWR FET 500V 20A 0,27Ohm 0 4,5 4,091 4,05 International Rectifier IRFPG50 . . TO247AC, N-chan PWR MOSFET 1000V 6.1A 2Ohm, 630ns,-55/+150C 0 3,7 3,7 3,7 International Rectifier IRFPS37N50A . . SUPER247, N-chan PWR MOSFET 36A 500V 0.13Ohm 0 13 13 13 International Rectifier IRFR9110 . . DPAK, P-chan TMOS PWR FET 100V 1A 1,2Ohm 0 1 0,91 0,9 International Rectifier IRFZ44N . . TO220AB, N-ch PWR MOSFET, 55V 49A 94W 95ns, Rds(on) = 0.0175Ohm, Tj = -55°C to +175°C 0 0,64 0,582 0,529 International Rectifier IRFZ44V . . TO220AB, PWR MOSFET, 60V 55A 70ns,Tj = -55°C to +175°C 0 0,75 0,75 0,75 International Rectifier IRFZ48NS . . TO263AB, N-chan MOSFET 55V 53A 0 2,5 2,5 2,5 International Rectifier IRFZ48V . . TO220AB, N-ch PWR MOSFET, 60V 72A 150W 100ns, Rds(on) = 0.012Ohm, Tj = -55°C to +175°C 0 0,94 0,94 0,94 International Rectifier IRL3103D1S . . D 2 Pak, N-ch PWR MOSFET, 30V 64A 89W 77ns, Rds(on) = 0.014Ohm, Tj = -55°C to +150°C / with Schottky Diode 0 1,44 1,44 1,44 International Rectifier IRLML2402TR . . SOT-23, N-ch PWR MOSFET, 20V 1.2A 0.54W 38ns, Rds(on) = 0.25Ohm, Tj = -55°C to +150°C 0 0,243 0,221 0,21 International Rectifier IRLR024 . . TO252AA, N-chan MOSFET 60V 14A 0 7,32 6,655 6,05 Motorola MMBF4393LT1 . . SOT23, SS JFET T/R3K 0 1 0,91 0,9 Motorola MTD20N03HDL . . DPACK, HDTMOS PWR FET 20A 30V 0.035Ohm, Logic level 0 0,88 0,8 0,79 Motorola MTD20N06HDL . . DPACK, HDTMOS PWR FET 20A 60V 0.045Ohm, Logic level 0 0,8 0,728 0,662 ON Semiconductor MTD20P03HDL . . DPACK, HDTMOS PWR FET 20A 30V 0.035Ohm, Logic level 0 1 1 1 Motorola MTD20P06HDL . . DPACK, HDTMOS PWR FET 20A 60V 0.045Ohm, Logic level 0 0,75 0,7 0,637 ON Semiconductor MTD3055VL1 TO252 (RK3055E) I-PACK, N-chan TMOS PWR FET 12A 60V 0.15Ohm 6 0,39 0,355 0,34 ON Semiconductor MTP10N10EL . . TO220, N-chan TMOS PWR FET 100V 10A 0,22Ohm, Logic Level 0 1,21 1,1 1,09 Motorola MTP27N10E . . TO220AB, TMOS PWR FET 27A 100V 0.07Ohm 0 1,2 1,091 1,08 ON Semiconductor MTP2955V . . TO220, P-ch PWR MOSFET, 60V 12A 60W 50ns, Rds(on) = 0.23Ohm,Tj = -55°C to +175°C 0 $0,785 $0,713 $0,679 ON Semiconductor MTP33N10E . . TO220, TMOS PWR FET 33A 100V 0.06Ohm 0 2,47 2,246 2,22 ON Semiconductor MTP3N100E . . TO220, TMOS PWR FET 3A 1000V 4.0 Ohm 0 3,23 2,937 2,91 ON Semiconductor MTP4N50E TO220AB (2SK2793) TMOS PWR E-FET 4A 500V 1.5Ohm 0 1,35 1,228 1,22 Motorola MTP52N06VL . . TO220AB, TMOS V PWR 52A 60V 0.025 Ohm 0 1,66 1,51 1,49 Motorola MTP8N50E TO220AB (2SK2714) TO220AB, TMOS PWR E-FET 8A 500V 0.8Ohm 0 1,4 1,273 1,26 ON Semiconductor MTW7N80E . . TO220AB, N-chan 7A 800V 0 7,4 6,728 6,66 ON Semiconductor MTW8N60E . . TO247, N-ch PWR MOSFET, 600V 8A 180W 381ns, Rds(on) = 0.55Ohm, Tj = -55°C to +150°C 0 5,15 4,682 4,257 Motorola MTY100N10E . . TO264, TMOS PWR E-FET 100A 100V 0.011Ohm 0 7 7 7 Siliconix ND2020L . . TO92, N-ch Depletion-Mode MOSFET, 200V 0.132A @ Tj = +150°C ( 0.8 W @ Ta = +25°C) 20ns, Rds(on) = 20 Ohm, Vgs(off) = -2.5V, Tj = -55°C to +150°C 0 $2,153 $1,957 $1,863 Vishay SI9435DY . . SO8, P-chan MOSFET 30V 4.6A 0.07Ohm 0 0,98 0,98 0,98 Siliconix SI9956DY . . SO8, N-chan Dual TMOS PWR FET 20V 3.5A 0,1Ohm 0 0,62 0,564 0,56 Samsung SSH10N90A . . TO3P, N-chan MOSFET 900V 10A 0 3 2,728 2,7 STM STE110NA20 . . ISOTOP, N-ch . Fast PWR MOS FET 200V, 110A, 0.019 Ohm, 625ns, Top = to +150°C 0 56,1 56,1 56,1 STM STE24NA100 . . SOT227B, MOSFET PWR Module 1000V 24A 0 39,6 39,6 39,6 Siliconix SUB75P05-08 . . TO263, P-Channel MOSFET, Vds=-55 V, Id=-75 A (25C), Rds (on)=8 mOhm, Tj=Top=–55 to 175C 0 3,4 3,091 2,81 Vishay TP0101TS . . SOT-23, P-Channel, Vds=20 V, Is=1.0 A, Rds(on)=0.85 Ohm Low-Threshold MOSFET, Tj=Tstg= –55 to +150 C 0 0,14 0,14 0,14 Siliconix VCR4N . . TO18, N-chan JFET 0 2,09 1,9 1,728 Vishay VN2010L . . TO92, N-ch MOSFET, 200V 0.19A 0.32W 21ns, Rds(on) = 6 Ohm, Tj = -55°C to +150°C 0 0,39 0,355 0,323 Менеджер: Dmitry Toporkov Отправить запрос можно, используя: phone/fax: +7(343)-373-4769, +7(343)-373-4703 On-line оформление заявки.